Kevin Jing CHEN 陳敬
Kevin Jing CHEN 陳敬 

Email

Email e.g. xxx@ust.hk
eekjchen@ust.hk

Office

Google Scholar

Scopus ID

First Name (and Middle Name If Any)
Kevin Jing
CHEN
陳敬
Highest Degree Acquired (e.g. PhD in Engineering Science)
PhD in Electrical Engineering, The University of Maryland

Contact Information

Email

Email e.g. xxx@ust.hk
eekjchen@ust.hk

Office

Google Scholar

Scopus ID

Research Interests

Research Interests
Compound semiconductor materials and devices
Gallium nitride (GaN)-based microwave power transistors
High-frequency semiconductor devices
Power semiconductor devices and ICs
Wide-bandgap semiconductor devices

Biography

Biography

Prof Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-US Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan 1994 to Dec 1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.

From 1996 to 1998, he was an Assistant Professor in the Department of Electronic Engineering, City University of Hong Kong, carrying out research on high-speed device and circuit simulations. Prof Chen then joined the wireless semiconductor division of Agilent Technologies, Inc. (formerly Hewlett-Packard Co.), Santa Clara, California, in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. His work at Agilent covered RF characterization and modeling of microwave transistors, RF IC and package design. Prof Chen joined HKUST in Nov 2000.

Research Interests

Research Interests
Compound semiconductor materials and devices
Gallium nitride (GaN)-based microwave power transistors
High-frequency semiconductor devices
Power semiconductor devices and ICs
Wide-bandgap semiconductor devices

Biography

Biography

Prof Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-US Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan 1994 to Dec 1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.

From 1996 to 1998, he was an Assistant Professor in the Department of Electronic Engineering, City University of Hong Kong, carrying out research on high-speed device and circuit simulations. Prof Chen then joined the wireless semiconductor division of Agilent Technologies, Inc. (formerly Hewlett-Packard Co.), Santa Clara, California, in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. His work at Agilent covered RF characterization and modeling of microwave transistors, RF IC and package design. Prof Chen joined HKUST in Nov 2000.